000 01201nam a2200397 a 4500
001 vtls000041813
003 VRT
005 20240802173114.0
008 101206s1999 xxu rb 000 0 eng d
020 _a0070655235
035 _aVNU030050403
039 9 _a201808031603
_bhaianh
_c201711171628
_dphuongntt
_c201612231544
_dhaultt
_c201502080019
_dVLOAD
_y201012062306
_zVLOAD
041 _aeng
044 _aUS
082 0 4 _a621.3815284
_bTSI 1999
_221
090 _a621.381
_bTSI 1999
094 _a32.84
100 1 _aTsividis, Yannis
245 1 0 _aOperation and modeling of the mos transistor /
_cYannis Tsividis
250 _a2nd ed.
260 _aBoston :
_bMcGraw-Hill,
_c1999
300 _a620 p. :
_bill. ;
_c24 cm.
650 0 _aMetal oxide semiconductors
_xMathematical models.
650 0 _aMetal oxide semiconductor field-effect transistors
_xMathematical models
650 0 _aMechatronics Engineering Technology
650 0 _aChất bán dẫn
650 0 _aKỹ thuật vô tuyến
650 0 _aVô tuyến điện
900 _aTrue
911 _aTrương Kim Thanh
912 _aHoàng Thị Hoà
925 _aG
926 _a0
927 _aSH
942 _1
999 _c302290
_d302290